Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jhon Jhy Liaw0
Date of Patent
November 21, 2017
Patent Application Number
15236044
Date Filed
August 12, 2016
Patent Citations Received
Patent Primary Examiner
Patent abstract
The present disclosure provides a static random access memory (SRAM) cell comprising first, second, and third fins defined in various well regions. The fins are spaced from each other along a first direction and extend lengthwise generally along a second direction perpendicular to the first direction. The fins include source, drain, and channel regions for various pull-up, pull-down, and pass-gate fin field-effect transistors (FinFETs). The SRAM cell further includes various gate features over the fins and extending lengthwise generally along the first direction. The gate features include gate regions for the various FinFETs.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.