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US Patent 10008428 Methods for depositing films on sensitive substrates

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
July 14, 2017
Date of Patent
June 26, 2018
Patent Application Number
15650662
Patent Citations Received
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US Patent 11776807 Plasma enhanced deposition processes for controlled formation of oxygen containing thin films
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US Patent 10679848 Selective atomic layer deposition with post-dose treatment
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US Patent 10741458 Methods for depositing films on sensitive substrates
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US Patent 11562900 Formation of SiOC thin films
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US Patent 10804099 Selective inhibition in atomic layer deposition of silicon-containing films
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US Patent 10957514 Apparatus and method for deposition and etch in gap fill
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US Patent 11011379 Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
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US Patent 11646198 Ultrathin atomic layer deposition film accuracy thickness control
0
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US Patent 10269559 Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
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US Patent 11521849 In-situ deposition process
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•••
Patent Inventor Names
Adrien LaVoie
0
Hu Kang
0
Jon Henri
0
Shankar Swaminathan
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10008428
Patent Primary Examiner
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Thanhha Pham

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