Is a
Patent attributes
Patent Applicant
0
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shou-Wei Hsieh0
Hao-Ming Lee0
Hsin-Yu Chen0
Sheng-Hao Lin0
Date of Patent
June 26, 2018
0Patent Application Number
156423240
Date Filed
July 5, 2017
0Patent Citations Received
...
Patent Primary Examiner
Patent abstract
A method for fabricating semiconductor device includes the steps of first forming a metal gate on a substrate and a spacer around the metal gate, in which the metal gate comprises a high-k dielectric layer, a work function metal layer, and a low-resistance metal layer. Next, part of the high-k dielectric layer is removed to form an air gap between the work function metal layer and the spacer.
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