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US Patent 10026891 Magnetoresistive element

Patent 10026891 was granted and assigned to Toshiba Memory Corporation on July, 2018 by the United States Patent and Trademark Office.

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Patent attributes

Patent Applicant

Toshiba Memory Corporation

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Current Assignee

Toshiba Memory Corporation

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Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Daisuke Watanabe0

Hiroaki Yoda0

Kazuya Sawada0

Koji Ueda0

Tadashi Kai0

Toshihiko Nagase0

Youngmin Eeh0

Date of Patent

July 17, 2018

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Patent Application Number

151985430

Date Filed

June 30, 2016

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Patent Citations Received

US Patent 11563168 Magnetic memory device that suppresses diffusion of elements

US Patent 12089505 Magnetic memory device

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US Patent 12075629 Magnetic memory device with nonmagnetic layer having two additive elements

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US Patent 12063869 Magnetic memory device

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Patent Primary Examiner

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Patent abstract

A magnetoresistive element including a first magnetic layer; a first nonmagnetic layer provided on the first magnetic layer, the first nonmagnetic layer formed of SrTiO3, SrFeO3, LaAlO3, NdCoO3, or BN; and a second magnetic layer provided on the first nonmagnetic layer, wherein the first nonmagnetic layer is lattice-matched to the first magnetic layer, and the second magnetic layer is lattice-matched to the first nonmagnetic layer.

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