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US Patent 10026891 Magnetoresistive element

Patent 10026891 was granted and assigned to Toshiba Memory Corporation on July, 2018 by the United States Patent and Trademark Office.

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Patent Citations Received
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US Patent 12089505 Magnetic memory device
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US Patent 12075629 Magnetic memory device with nonmagnetic layer having two additive elements
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US Patent 12063869 Magnetic memory device
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Patent abstract

A magnetoresistive element including a first magnetic layer; a first nonmagnetic layer provided on the first magnetic layer, the first nonmagnetic layer formed of SrTiO3, SrFeO3, LaAlO3, NdCoO3, or BN; and a second magnetic layer provided on the first nonmagnetic layer, wherein the first nonmagnetic layer is lattice-matched to the first magnetic layer, and the second magnetic layer is lattice-matched to the first nonmagnetic layer.

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Patent Inventor Names
Daisuke Watanabe0
Hiroaki Yoda0
Kazuya Sawada0
Koji Ueda0
Tadashi Kai0
Toshihiko Nagase0
Youngmin Eeh0
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Patent Citations Received
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US Patent 11563168 Magnetic memory device that suppresses diffusion of elements
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Infobox
Is a
Patent
Patent
0
Patent Applicant
Toshiba Memory Corporation
Toshiba Memory Corporation
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Current Assignee
Toshiba Memory Corporation
Toshiba Memory Corporation
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
100268910
Date of Patent
July 17, 2018
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Patent Application Number
151985430
Date Filed
June 30, 2016
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Patent Primary Examiner
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Andres Munoz
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 US Patent 10026891 Magnetoresistive element

Infobox
Is a
Patent
Patent
Patent applicant
Toshiba Memory Corporation
Toshiba Memory Corporation
Current assignee
Toshiba Memory Corporation
Toshiba Memory Corporation
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
10026891
Date of patent
July 17, 2018
Patent application number
15198543
Date Filed
June 30, 2016
Patent primary examiner
‌
Andres Munoz

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