Log in
Sign up
Golden has been acquired by ComplyAdvantage.Read about it here ⟶
‌

US Patent 10026892 Precessional spin current structure for MRAM

Patent 10026892 was granted and assigned to Spin Transfer Technologies on July, 2018 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributorsActivity
Patent abstract

A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes a precessional spin current (PSC) magnetic layer in conjunction with a perpendicular MTJ where the in-plane magnetization direction of the PSC magnetic layer is free to rotate.

Timeline

No Timeline data yet.

Further Resources

Title
Author
Link
Type
Date
No Further Resources data yet.

References

Find more entities like US Patent 10026892 Precessional spin current structure for MRAM

Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
Open Query Tool
Access by API
Golden Query Tool
Golden logo