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US Patent 10026892 Precessional spin current structure for MRAM

Patent 10026892 was granted and assigned to Spin Transfer Technologies on July, 2018 by the United States Patent and Trademark Office.

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Patent abstract

A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes a precessional spin current (PSC) magnetic layer in conjunction with a perpendicular MTJ where the in-plane magnetization direction of the PSC magnetic layer is free to rotate.

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Patent Inventor Names
Bartlomiej Adam Kardasz0
Michail Tzoufras0
Mustafa Michael Pinarbasi0
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Infobox
Is a
Patent
Patent
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Patent Applicant
Spin Transfer Technologies
Spin Transfer Technologies
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Current Assignee
Spin Transfer Technologies
Spin Transfer Technologies
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
100268920
Date of Patent
July 17, 2018
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Patent Application Number
157948710
Date Filed
October 26, 2017
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Patent Citations Received
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US Patent 10236047 Shared oscillator (STNO) for MRAM array write-assist in orthogonal STT-MRAM
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US Patent 10236048 AC current write-assist in orthogonal STT-MRAM
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US Patent 10236439 Switching and stability control for perpendicular magnetic tunnel junction device
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US Patent 10255962 Microwave write-assist in orthogonal STT-MRAM
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US Patent 10270027 Self-generating AC current assist in orthogonal STT-MRAM
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US Patent 10319900 Perpendicular magnetic tunnel junction device with precessional spin current layer having a modulated moment density
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US Patent 10339993 Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switching
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US Patent 10360961 AC current pre-charge write-assist in orthogonal STT-MRAM
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US Patent 10468588 Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer
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US Patent 10468590 High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory
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US Patent 10553787 Precessional spin current structure for MRAM
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US Patent 10580827 Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching
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US Patent 10615335 Spin transfer torque structure for MRAM devices having a spin current injection capping layer
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US Patent 10643680 Memory cell having magnetic tunnel junction and thermal stability enhancement layer
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US Patent 10665777 Precessional spin current structure with non-magnetic insertion layer for MRAM
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US Patent 10672976 Precessional spin current structure with high in-plane magnetization for MRAM
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US Patent 10692556 Defect injection structure and mechanism for magnetic memory
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US Patent 10693056 Three-dimensional (3D) magnetic memory device comprising a magnetic tunnel junction (MTJ) having a metallic buffer layer
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US Patent 10734574 Method of manufacturing high annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory
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US Patent 10770561 Methods of fabricating dual threshold voltage devices
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US Patent 10777736 Polishing stop layer(s) for processing arrays of semiconductor elements
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US Patent 10803916 Methods and systems for writing to magnetic memory devices utilizing alternating current
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US Patent 10878870 Defect propagation structure and mechanism for magnetic memory
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US Patent 11271149 Precessional spin current structure with nonmagnetic insertion layer for MRAM
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US Patent 11355699 Precessional spin current structure for MRAM
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Patent Primary Examiner
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Kimberly Rizkallah
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