Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
April 23, 2019
Patent Application Number
15858988
Date Filed
December 29, 2017
Patent Citations
Patent Citations Received
...
Patent Primary Examiner
Patent abstract
Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes a STNO, an in-plane polarization magnetic layer, and a perpendicular MTJ.
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