Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Mustafa Michael Pinarbasi0
Bartlomiej Adam Kardasz0
Michail Tzoufras0
Date of Patent
February 4, 2020
0Patent Application Number
160277390
Date Filed
July 5, 2018
0Patent Citations
...
Patent Primary Examiner
Patent abstract
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes a precessional spin current (PSC) magnetic layer in conjunction with a perpendicular MTJ where the in-plane magnetization direction of the PSC magnetic layer is free to rotate.
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