Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
March 12, 2019
Patent Application Number
15859517
Date Filed
December 30, 2017
Patent Citations Received
...
Patent Primary Examiner
Patent abstract
Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device also utilizes a plurality of orthogonal spin transfer magnetic tunnel junction (OST-MTJ) stacks connected in series, with each OST-MTJ stack capable of selective activation by application of an external magnetic field, thereby allowing efficient writing of the bit without a concomitant increase in read disturb.
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