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US Patent 10229724 Microwave write-assist in series-interconnected orthogonal STT-MRAM devices

Patent 10229724 was granted and assigned to Spin Memory on March, 2019 by the United States Patent and Trademark Office.

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Patent abstract

Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device also utilizes a plurality of orthogonal spin transfer magnetic tunnel junction (OST-MTJ) stacks connected in series, with each OST-MTJ stack capable of selective activation by application of an external magnetic field, thereby allowing efficient writing of the bit without a concomitant increase in read disturb.

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Infobox
Is a
Patent
Patent
0
Patent Applicant
‌
Spin Memory
0
Current Assignee
‌
Spin Memory
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
102297240
Date of Patent
March 12, 2019
0
Patent Application Number
158595170
Date Filed
December 30, 2017
0
Patent Citations Received
‌
US Patent 10339993 Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switching
0
‌
US Patent 10403343 Systems and methods utilizing serial configurations of magnetic memory devices
0
‌
US Patent 10468588 Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer
0
‌
US Patent 10468590 High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory
0
‌
US Patent 10553787 Precessional spin current structure for MRAM
0
‌
US Patent 10580827 Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching
0
‌
US Patent 10615335 Spin transfer torque structure for MRAM devices having a spin current injection capping layer
0
‌
US Patent 10643680 Memory cell having magnetic tunnel junction and thermal stability enhancement layer
0
‌
US Patent 10665777 Precessional spin current structure with non-magnetic insertion layer for MRAM
0
‌
US Patent 10672976 Precessional spin current structure with high in-plane magnetization for MRAM
0
‌
US Patent 10734574 Method of manufacturing high annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory
0
‌
US Patent 10777736 Polishing stop layer(s) for processing arrays of semiconductor elements
0
‌
US Patent 10803916 Methods and systems for writing to magnetic memory devices utilizing alternating current
0
‌
US Patent 11271149 Precessional spin current structure with nonmagnetic insertion layer for MRAM
0
‌
US Patent 11283010 Precessional spin current structure for magnetic random access memory with novel capping materials
0
‌
US Patent 11355699 Precessional spin current structure for MRAM
0
Patent Primary Examiner
‌
Douglas King
0
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Infobox
Is a
Patent
Patent
0
Patent Applicant
‌
Spin Memory
0
Current Assignee
‌
Spin Memory
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
102297240
Date of Patent
March 12, 2019
0
Patent Application Number
158595170
Date Filed
December 30, 2017
0
Patent Citations Received
‌
US Patent 10339993 Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switching
0
‌
US Patent 10403343 Systems and methods utilizing serial configurations of magnetic memory devices
0
‌
US Patent 10468588 Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer
0
‌
US Patent 10468590 High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory
0
‌
US Patent 10553787 Precessional spin current structure for MRAM
0
‌
US Patent 10580827 Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching
0
‌
US Patent 10615335 Spin transfer torque structure for MRAM devices having a spin current injection capping layer
0
‌
US Patent 10643680 Memory cell having magnetic tunnel junction and thermal stability enhancement layer
0
‌
US Patent 10665777 Precessional spin current structure with non-magnetic insertion layer for MRAM
0
‌
US Patent 10672976 Precessional spin current structure with high in-plane magnetization for MRAM
0
‌
US Patent 10734574 Method of manufacturing high annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory
0
‌
US Patent 10777736 Polishing stop layer(s) for processing arrays of semiconductor elements
0
‌
US Patent 10803916 Methods and systems for writing to magnetic memory devices utilizing alternating current
0
‌
US Patent 11271149 Precessional spin current structure with nonmagnetic insertion layer for MRAM
0
‌
US Patent 11283010 Precessional spin current structure for magnetic random access memory with novel capping materials
0
‌
US Patent 11355699 Precessional spin current structure for MRAM
0
Patent Primary Examiner
‌
Douglas King
0
"update citations for inverse infoboxes"
Golden AI profile picture
Golden AI
edited on 26 Sep, 2022

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