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US Patent 10360961 AC current pre-charge write-assist in orthogonal STT-MRAM

Patent 10360961 was granted and assigned to Spin Memory on July, 2019 by the United States Patent and Trademark Office.

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Patent abstract

Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes an in-plane polarization magnetic layer and a perpendicular MTJ in conjugation with a alternating current precharge and a programming current pulse that comprises an alternating perturbation frequency and a direct current.

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