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US Patent 10360961 AC current pre-charge write-assist in orthogonal STT-MRAM

Patent 10360961 was granted and assigned to Spin Memory on July, 2019 by the United States Patent and Trademark Office.

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Patent abstract

Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes an in-plane polarization magnetic layer and a perpendicular MTJ in conjugation with a alternating current precharge and a programming current pulse that comprises an alternating perturbation frequency and a direct current.

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Patent Inventor Names
Kadriye Deniz Bozdag0
Marcin Jan Gajek0
Michail Tzoufras0
Mourad El Baraji0
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=103609610
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Infobox
Is a
Patent
Patent
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Patent Applicant
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Spin Memory
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Current Assignee
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Spin Memory
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
103609610
Date of Patent
July 23, 2019
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Patent Application Number
158589500
Date Filed
December 29, 2017
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=103609610
Patent Citations
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US Patent 10008248 Circuits and devices based on enhanced spin hall effect for efficient spin transfer torque
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US Patent 10026892 Precessional spin current structure for MRAM
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US Patent 10032978 MRAM with reduced stray magnetic fields
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Patent Citations Received
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US Patent 10468588 Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer
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US Patent 10553787 Precessional spin current structure for MRAM
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US Patent 10580827 Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching
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US Patent 10615335 Spin transfer torque structure for MRAM devices having a spin current injection capping layer
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US Patent 10643680 Memory cell having magnetic tunnel junction and thermal stability enhancement layer
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US Patent 10665777 Precessional spin current structure with non-magnetic insertion layer for MRAM
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US Patent 10672976 Precessional spin current structure with high in-plane magnetization for MRAM
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US Patent 10734574 Method of manufacturing high annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory
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US Patent 10777736 Polishing stop layer(s) for processing arrays of semiconductor elements
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US Patent 11271149 Precessional spin current structure with nonmagnetic insertion layer for MRAM
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US Patent 11355699 Precessional spin current structure for MRAM
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Patent Primary Examiner
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Huan Hoang
0
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