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US Patent 10270027 Self-generating AC current assist in orthogonal STT-MRAM

Patent 10270027 was granted and assigned to Spin Memory on April, 2019 by the United States Patent and Trademark Office.

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Patent abstract

Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes a STNO, an in-plane polarization magnetic layer, and a perpendicular MTJ.

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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=1027002700
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Infobox
Is a
Patent
Patent
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Patent Applicant
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Spin Memory
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Current Assignee
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Spin Memory
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
102700270
Date of Patent
April 23, 2019
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Patent Application Number
158589880
Date Filed
December 29, 2017
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=102700270
Patent Citations
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US Patent 10026892 Precessional spin current structure for MRAM
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US Patent 10032978 MRAM with reduced stray magnetic fields
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Patent Citations Received
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US Patent 10468588 Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer
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US Patent 10468590 High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory
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US Patent 10553787 Precessional spin current structure for MRAM
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US Patent 10580827 Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching
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US Patent 10615335 Spin transfer torque structure for MRAM devices having a spin current injection capping layer
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US Patent 10643680 Memory cell having magnetic tunnel junction and thermal stability enhancement layer
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US Patent 10665777 Precessional spin current structure with non-magnetic insertion layer for MRAM
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US Patent 10672976 Precessional spin current structure with high in-plane magnetization for MRAM
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US Patent 10726892 Metallic magnetic memory devices for cryogenic operation and methods of operating the same
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US Patent 10734574 Method of manufacturing high annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory
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US Patent 10777736 Polishing stop layer(s) for processing arrays of semiconductor elements
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US Patent 10797227 Spin-transfer torque MRAM with a negative magnetic anisotropy assist layer and methods of operating the same
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US Patent 10811596 Spin transfer torque MRAM with a spin torque oscillator stack and methods of making the same
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US Patent 10862022 Spin-transfer torque MRAM with magnetically coupled assist layers and methods of operating the same
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US Patent 10916284 Metallic magnetic memory devices for cryogenic operation and methods of operating the same
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US Patent 11271149 Precessional spin current structure with nonmagnetic insertion layer for MRAM
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US Patent 11283010 Precessional spin current structure for magnetic random access memory with novel capping materials
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US Patent 11309487 Spin transfer torque MRAM with a spin torque oscillator stack and methods of making the same
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US Patent 11355699 Precessional spin current structure for MRAM
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US Patent 11476409 Spin-transfer torque MRAM with a negative magnetic anisotropy assist layer and methods of operating the same
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US Patent 11488647 Stacked magnetoresistive structures and methods therefor
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Patent Primary Examiner
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Huan Hoang
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