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US Patent 10255962 Microwave write-assist in orthogonal STT-MRAM

Patent 10255962 was granted and assigned to Spin Memory on April, 2019 by the United States Patent and Trademark Office.

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Patent abstract

Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device also utilizes an external magnetic field generator, thereby allowing efficient writing of the bit without a concomitant increase in read disturb.

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