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US Patent 10255962 Microwave write-assist in orthogonal STT-MRAM

Patent 10255962 was granted and assigned to Spin Memory on April, 2019 by the United States Patent and Trademark Office.

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Patent abstract

Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device also utilizes an external magnetic field generator, thereby allowing efficient writing of the bit without a concomitant increase in read disturb.

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Patent Inventor Names
Kadriye Deniz Bozdag0
Marcin Jan Gajek0
Michail Tzoufras0
Mourad El Baraji0
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Infobox
Is a
Patent
Patent
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Patent Applicant
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Spin Memory
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Current Assignee
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Spin Memory
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
102559620
Date of Patent
April 9, 2019
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Patent Application Number
158595140
Date Filed
December 30, 2017
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Patent Citations
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US Patent 10008248 Circuits and devices based on enhanced spin hall effect for efficient spin transfer torque
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US Patent 10026892 Precessional spin current structure for MRAM
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US Patent 10032978 MRAM with reduced stray magnetic fields
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Patent Citations Received
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US Patent 10692556 Defect injection structure and mechanism for magnetic memory
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US Patent 10693056 Three-dimensional (3D) magnetic memory device comprising a magnetic tunnel junction (MTJ) having a metallic buffer layer
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US Patent 10770561 Methods of fabricating dual threshold voltage devices
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US Patent 10803916 Methods and systems for writing to magnetic memory devices utilizing alternating current
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US Patent 10854260 Adjustable current selectors
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US Patent 10878870 Defect propagation structure and mechanism for magnetic memory
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US Patent 10937478 Systems and methods utilizing serial and parallel configurations of magnetic memory devices
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US Patent 11283010 Precessional spin current structure for magnetic random access memory with novel capping materials
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Patent Primary Examiner
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Leon Viet Q Nguyen
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Patent citations received
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US Patent 10878870 Defect propagation structure and mechanism for magnetic memory

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