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US Patent 10692556 Defect injection structure and mechanism for magnetic memory

Patent 10692556 was granted and assigned to Spin Memory on June, 2020 by the United States Patent and Trademark Office.

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Patent

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Patent Applicant

Current Assignee

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

10692556

Date of Patent

June 23, 2020

Patent Application Number

16147257

Date Filed

September 28, 2018

Patent Citations

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US Patent 10255962 Microwave write-assist in orthogonal STT-MRAM

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US Patent 10347308 Systems and methods utilizing parallel configurations of magnetic memory devices

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US Patent 10326073 Spin hall effect (SHE) assisted three-dimensional spin transfer torque magnetic random access memory (STT-MRAM)

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US Patent 10026892 Precessional spin current structure for MRAM

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US Patent 10109367 Magnetic memory device and method for operating the same

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US Patent 10199083 Three-terminal MRAM with ac write-assist for low read disturb

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US Patent 10236047 Shared oscillator (STNO) for MRAM array write-assist in orthogonal STT-MRAM

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US Patent 10236048 AC current write-assist in orthogonal STT-MRAM

Patent Primary Examiner

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Gene N Auduong

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