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US Patent 10043655 Plasma activated conformal dielectric film deposition

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
February 7, 2017
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Date of Patent
August 7, 2018
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Patent Application Number
15426889
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Patent Citations Received
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US Patent 11778805 Semiconductor memory devices and methods of fabricating the same
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US Patent 10269559 Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
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US Patent 10361076 Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
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US Patent 10559468 Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
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US Patent 11239239 Semiconductor memory devices and methods of fabricating the same
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US Patent 10679848 Selective atomic layer deposition with post-dose treatment
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US Patent 10741458 Methods for depositing films on sensitive substrates
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US Patent 10804099 Selective inhibition in atomic layer deposition of silicon-containing films
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US Patent 10957514 Apparatus and method for deposition and etch in gap fill
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US Patent 11011379 Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
•••
Patent Inventor Names
Shankar Swaminathan
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Mandyam Sriram
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Pramod Subramonium
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Vishwanathan Rangarajan
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Andrew J. McKerrow
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Bart van Schravendijk
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Dennis Hausmann
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Jon Henri
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Kirthi Kattige
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10043655
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Patent Primary Examiner
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Luan C Thai
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