Patent attributes
The invention relates to an optoelectronic device (50) including: a semiconductor substrate (14) doped with a first conductivity type; semiconductor contact pads (54) or a semiconductor layer, in contact with a surface of the substrate, doped with a second conductivity type opposite to the first type; conical or frusto-conical wired semiconductor elements (26), doped with the first conductivity type, each element being in contact with one of the contact pads or with the layer; light-emitting semiconductor portions (30), each portion at least partially covering one of the semiconductor elements; and a circuit (S) for polarizing the contact pads (54) or the layer. The contact pads or the layer are selected among: aluminum nitride, boron nitride, silicon carbide, magnesium nitride, gallium and magnesium nitride, or a combination of same and the nitride compounds thereof.
