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US Patent 11264530 Light emitting diode (LED) devices with nucleation layer

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Is a

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Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Toni Lopez0

Isaac Wildeson0

Parijat Deb0

Robert Armitage0

Hee-Jin Kim0

Date of Patent

March 1, 2022

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Patent Application Number

167213860

Date Filed

December 19, 2019

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Patent abstract

Described are light emitting diode (LED) devices having patterned substrates and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The nucleation layer results in growth of smooth coalesced III-nitride layers over the patterns.

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