Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
August 21, 2018
Patent Application Number
15788023
Date Filed
October 19, 2017
Patent Citations Received
Patent Primary Examiner
Patent abstract
The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10−9 A/cm2 to 1×10−4 A/cm2 in a rated voltage VR.
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