Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yuta Yokotsuji0
Masatoshi Aketa0
Date of Patent
March 30, 2021
0Patent Application Number
168509520
Date Filed
April 16, 2020
0Patent Citations
Patent Citations Received
Patent Primary Examiner
Patent abstract
The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10−9 A/cm2 to 1×10−4 A/cm2 in a rated voltage VR.
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