Patent attributes
A stacked III-V semiconductor diode having a p+ substrate with a dopant concentration of 5*1018 to 5*1020 cm−3, a layer thickness of 50-500 μm, and formed of a GaAs compound, an n−-layer with a dopant concentration of 1014-1016 cm−3, a layer thickness of 10-300 μm, and formed of a GaAs compound, an n+ layer with a dopant concentration of at least 1019 cm−3, a layer thickness less than 2 μm and formed of a GaAs compound, wherein the n− layer and the n+ layer are materially connected to one another, a doped intermediate layer with a layer thickness of 5-50 μm and a dopant concentration of 1015-1017 cm−3 is placed between the p+ substrate and the n− layer, and the intermediate layer is materially connected to the p+ substrate and to the n− layer.
