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US Patent 10074558 FinFET structure with controlled air gaps

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
November 1, 2017
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Date of Patent
September 11, 2018
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Patent Application Number
15800359
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Patent Citations Received
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US Patent 12133385 Bottom select gate contacts for center staircase structures in three-dimensional memory devices
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US Patent 10236218 Methods, apparatus and system for forming wrap-around contact with dual silicide
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US Patent 11532480 Methods of forming contact features in semiconductor devices
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US Patent 11018011 Methods of forming contact features in semiconductor devices
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US Patent 11804402 FinFET structure with controlled air gaps
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US Patent 11908910 Semiconductor device having embedded conductive line and method of fabricating thereof
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US Patent 11476196 Semiconductor device with multi-layer dielectric
Patent Inventor Names
Kuo-Hua Pan
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Min-Yann Hsieh
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Wen-Che Tsai
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Hua-Feng Chen
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10074558
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Patent Primary Examiner
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Fazli Erdem
0

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