Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shreesh Narasimha0
Brian J. Greene0
Scott R. Stiffler0
Date of Patent
September 11, 2018
Patent Application Number
15451869
Date Filed
March 7, 2017
Patent Citations Received
Patent Primary Examiner
Patent abstract
A fin cut process cuts semiconductor fins after forming sacrificial gate structures that overlie portions of the fins. Selected gate structures are removed to form openings and exposed portions of the fins within the openings are etched. An isolation dielectric layer is deposited into the openings and between end portions of the cut fins. The process enables a single sacrificial gate structure to define the spacing between two active regions on dissimilar electrical nets.
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