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US Patent 10079289 Metal gate structure and methods thereof

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
July 14, 2017
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Date of Patent
September 18, 2018
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Patent Application Number
15649865
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Patent Citations Received
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US Patent 11791217 Gate structure and method with dielectric gates and gate-cut features
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US Patent 10461171 Structure and formation method of semiconductor device with metal gate stacks
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US Patent 10629443 Bottom source/drain silicidation for vertical field-effect transistor (FET)
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US Patent 10998237 Gate structure and method with dielectric gates and gate-cut features
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US Patent 11037831 Gate structure and method
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US Patent 11043495 Integrated circuit semiconductor device and method of manufacturing the same
Patent Inventor Names
Tung-Heng Hsieh
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Tzung-Chi Lee
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Bao-Ru Young
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Chia-Sheng Fan
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10079289
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Patent Primary Examiner
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Tu-Tu Ho
0

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