Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kuo-Hua Pan0
Ta-Chun Lin0
Buo-Chin Hsu0
Chih-Yung Lin0
Jhon Jhy Liaw0
Date of Patent
June 15, 2021
0Patent Application Number
167374470
Date Filed
January 8, 2020
0Patent Citations
...
Patent Citations Received
0
Patent Primary Examiner
Patent abstract
A semiconductor structure includes a fin active region extruded from a semiconductor substrate; and a gate stack disposed on the fin active region. The gate stack includes a gate dielectric layer and a gate electrode disposed on the gate dielectric layer. The gate dielectric layer includes a first dielectric material. The semiconductor structure further includes a dielectric gate of a second dielectric material disposed on the fin active region. The gate dielectric layer extends from a sidewall of the gate electrode to a sidewall of the dielectric gate. The second dielectric material is different from the first dielectric material in composition.
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