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US Patent 11037831 Gate structure and method

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
January 8, 2020
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Date of Patent
June 15, 2021
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Patent Application Number
16737447
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Patent Citations
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US Patent 10083874 Gate cut method
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US Patent 10157796 Forming of marking trenches in structure for multiple patterning lithography
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US Patent 10176995 Methods, apparatus and system for gate cut process using a stress material in a finFET device
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US Patent 10177041 Fin-type field effect transistors (FINFETS) with replacement metal gates and methods
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US Patent 10217839 Field effect transistor (FET) with a gate having a recessed work function metal layer and method of forming the FET
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US Patent 10224204 Method of manufacturing integrated circuit device
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US Patent 10347540 Gate cut using selective deposition to prevent oxide loss
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US Patent 10388652 Intergrated circuit structure including single diffusion break abutting end isolation region, and methods of forming same
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US Patent 10395990 Semiconductor device and method for fabricating the same
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US Patent 10403548 Forming single diffusion break and end isolation region after metal gate replacement, and related structure
•••
Patent Inventor Names
Kuo-Hua Pan
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Ta-Chun Lin
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Buo-Chin Hsu
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Chih-Yung Lin
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Jhon Jhy Liaw
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11037831
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Patent Primary Examiner
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Mohammad M Hoque
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