Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Da Yang0
Mustafa Badaroglu0
Stanley Seungchul Song0
Vladimir Machkaoutsan0
Choh Fei Yeap0
Jeffrey Junhao Xu0
John Jianhong Zhu0
Kern Rim0
Date of Patent
September 18, 2018
0Patent Application Number
158390500
Date Filed
December 12, 2017
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A method includes forming a first spacer structure on a dummy gate of a semiconductor device and forming a sacrificial spacer on the first spacer structure. The method also includes etching a structure of the semiconductor device to create an opening, removing the sacrificial spacer via the opening, and depositing a material to close to define a gap.
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