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US Patent 10084090 Method and structure of stacked FinFET

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
November 9, 2015
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Date of Patent
September 25, 2018
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Patent Application Number
14936069
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Patent Citations Received
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US Patent 12094937 Stacked field effect transistor devices with replacement gate
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US Patent 10340221 Stacked FinFET anti-fuse
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US Patent 10636804 Stacked FinFET programmable inverter (EPROM)
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US Patent 10916552 Stacked FinFET mask-programmable read only memory containing spaced apart upper and lower threshold voltage setting layers
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US Patent 10998444 Stacked FinFET masked-programmable ROM
Patent Inventor Names
Ali Khakifirooz
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Alexander Reznicek
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Pouya Hashemi
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Kangguo Cheng
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10084090
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Patent Primary Examiner
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Lawrence-Linh T Nguyen
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