US Patent 10102891 Double-polarity memory read

Circuits, systems, and methods for double-polarity reading of double-polarity stored data information are described. In one embodiment, a method involves applying a first voltage with a first polarity to a plurality of the memory cells. The method involves applying a second voltage with a second polarity to one or more of the plurality of memory cells. The method involves detecting electrical responses of the one or more memory cells to the first voltage and the second voltage. The method also involves determining a logic state of the one or more memory cells based on the electrical responses of the one or more memory cells to the first voltage and the second voltage.