Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tatsuya Honda0
Masashi Tsubuku0
Shunpei Yamazaki0
Takatsugu Omata0
Yusuke Nonaka0
Akiharu Miyanaga0
Hiroki Ohara0
Kengo Akimoto0
...
Date of Patent
October 16, 2018
Patent Application Number
15648943
Date Filed
July 13, 2017
Patent Citations Received
...
Patent Primary Examiner
Patent abstract
A method comprising a step of forming an oxide semiconductor film over a substrate by a sputtering method while heating the substrate at a temperature of higher than 200° C. and lower than or equal to 400° C. is provided. The oxide semiconductor film comprises a crystalline region and is in a non-single-crystal state. The step of forming the oxide semiconductor film is performed by using a sputtering target comprising indium, gallium, zinc and oxygen and a sputtering gas comprising at least one of a rare gas and oxygen.
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