US Patent 10115685 Method of manufacturing a semiconductor structure
Patent 10115685 was granted and assigned to Taiwan Semiconductor Manufacturing Company on October, 2018 by the United States Patent and Trademark Office.
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A method of manufacturing a semiconductor structure includes providing a transceiver, forming a molding to surround the transceiver, forming a plurality of recesses extending through the molding, disposing a conductive material into the plurality of recesses to form a plurality of vias, disposing and patterning an insulating layer over the molding, the plurality of vias and the transceiver, and forming a redistribution layer (RDL) over the insulating layer, wherein the RDL comprises an antenna disposed over the insulating layer and a dielectric layer covering the antenna, and a portion of the antenna is extended through the insulating layer and is electrically connected with the transceiver.
US Patent 10115685 Method of manufacturing a semiconductor structure
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