US Patent 10128184 Antifuse structure in via hole in interplayer dielectric

An antifuse structure includes a first electrode layer, an inter-metal dielectric layer over the first electrode layer, and a via in the inter-metal dielectric layer. The via penetrates through the inter-metal dielectric layer exposing a portion of the first electrode layer. An antifuse layer is deposited in the via and over the portion of the first electrode layer. A second electrode is disposed in the via and over the antifuse layer. An interconnect layer may be deposited over the inter-metal dielectric layer and in electrical contact with the second electrode in the via.