Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Sung-soo Kim0
Koung-min Ryu0
Date of Patent
November 13, 2018
0Patent Application Number
158789900
Date Filed
January 24, 2018
0Patent Citations Received
Patent Primary Examiner
Patent abstract
An integrated circuit device includes a fin-type active area extending on a substrate in a first direction, a first gate line and a second gate line extending on the fin-type active area in parallel to each other in a second direction, which is different from the first direction, a first insulating capping layer covering an upper surface of the first gate line and extending in parallel to the first gate line, a second insulating capping layer covering an upper surface of the second gate line and extending in parallel to the second gate line, wherein a height of the first gate line and a height of the second gate line are different from each other.
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