US Patent 10128241 Integrated circuit devices

An integrated circuit device includes a fin-type active area extending on a substrate in a first direction, a first gate line and a second gate line extending on the fin-type active area in parallel to each other in a second direction, which is different from the first direction, a first insulating capping layer covering an upper surface of the first gate line and extending in parallel to the first gate line, a second insulating capping layer covering an upper surface of the second gate line and extending in parallel to the second gate line, wherein a height of the first gate line and a height of the second gate line are different from each other.