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US Patent 10134579 Method for high modulus ALD SiO2 spacer

Patent 10134579 was granted and assigned to Lam Research on November, 2018 by the United States Patent and Trademark Office.

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Patent abstract

Methods and apparatuses for forming high modulus silicon oxide spacers using atomic layer deposition are provided. Methods involve depositing at high temperature, using high plasma energy, and post-treating deposited silicon oxide using ultraviolet radiation. Such silicon oxide spacers are suitable for use as masks in multiple patterning applications to prevent pitch walking.

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Patent Inventor Names
Chloe Baldasseroni0
Shankar Swaminathan0
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Infobox
Is a
Patent
Patent
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Patent Applicant
Lam Research
Lam Research
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Current Assignee
Lam Research
Lam Research
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
101345790
Date of Patent
November 20, 2018
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Patent Application Number
153512210
Date Filed
November 14, 2016
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Patent Citations Received
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US Patent 10269559 Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
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US Patent 10454029 Method for reducing the wet etch rate of a sin film without damaging the underlying substrate
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US Patent 10629435 Doped ALD films for semiconductor patterning applications
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US Patent 10658172 Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
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US Patent 10804099 Selective inhibition in atomic layer deposition of silicon-containing films
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US Patent 10832908 Self-aligned multi-patterning process flow with ALD gapfill spacer mask
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US Patent 11404275 Selective deposition using hydrolysis
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Patent Primary Examiner
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Brook Kebede
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Patent citations received
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US Patent 11404275 Selective deposition using hydrolysis
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Patent citations received
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US Patent 10832908 Self-aligned multi-patterning process flow with ALD gapfill spacer mask
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Patent citations received
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US Patent 10804099 Selective inhibition in atomic layer deposition of silicon-containing films
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Patent citations received
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US Patent 10629435 Doped ALD films for semiconductor patterning applications

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