Patent attributes
A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base portion and a fin portion over the base portion. The semiconductor device structure includes a gate structure over the fin portion and extending across the fin portion. The semiconductor device structure includes a first semiconductor wire over the fin portion and passing through the gate structure. The semiconductor device structure includes a second semiconductor wire over the first semiconductor wire and passing through the gate structure. The gate structure surrounds the second semiconductor wire and separates the first semiconductor wire from the second semiconductor wire. The first semiconductor wire and the second semiconductor wire are made of different materials.