Patent attributes
Embodiments herein relate to systems, apparatuses, or processes directed to manufacturing transistors that include a substrate, an epitaxial layer with a first side and a second side opposite the first side, where the first side and the second side of the epitaxial layer are substantially planar, where the second side of the epitaxial layer is substantially parallel to the first side, and where the first side of the epitaxial layer is directly coupled with a side of the substrate. In particular, the epitaxial layer may be adjacent to an oxide layer having a side that is substantially planar, where the second side of the epitaxial layer is adjacent to the side of the oxide layer, and the epitaxial layer was grown and the growth was constrained by the oxide layer.
