US Patent 10134915 2-D material transistor with vertical structure

Semiconductor structures including two-dimensional (2-D) materials and methods of manufacture thereof are described. By implementing 2-D materials in transistor gate architectures such as field-effect transistors (FETs), the semiconductor structures in accordance with this disclosure include vertical gate structures and incorporate 2-D materials such as graphene, transition metal dichalcogenides (TMDs), or phosphorene.