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US Patent 10134915 2-D material transistor with vertical structure
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Patent
Date Filed
June 6, 2017
Date of Patent
November 20, 2018
Patent Application Number
15615498
Patent Citations Received
US Patent 12136656 Semiconductor structure having two-dimensional channel
0
US Patent 10818803 Fin-type field-effect transistors including a two-dimensional material
US Patent 11069819 Field-effect transistors with channel regions that include a two-dimensional material on a mandrel
US Patent 11935930 Wrap-around-contact for 2D-channel gate-all-around field-effect-transistors
0
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
10134915
Patent Primary Examiner
Fei Fei Yeung Lopez
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