Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
November 27, 2018
Patent Application Number
15917859
Date Filed
March 12, 2018
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device includes: a fin-shaped structure on a substrate; a single diffusion break (SDB) structure in the fin-shaped structure to divide the fin-shaped structure into a first portion and a second portion; a gate structure on the first portion; and a contact etch stop layer (CESL) adjacent to the gate structure and extending to cover the SDB structure.
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