US Patent 10141228 FinFET device having single diffusion break structure
Patent 10141228 was granted and assigned to United Microelectronics Corporation on November, 2018 by the United States Patent and Trademark Office.
All edits
Edits on 8 Dec, 2023
Golden AI
Edits made to:
Article (+382 characters)
Article
Patent abstract
A semiconductor device includes: a fin-shaped structure on a substrate; a single diffusion break (SDB) structure in the fin-shaped structure to divide the fin-shaped structure into a first portion and a second portion; a gate structure on the first portion; and a contact etch stop layer (CESL) adjacent to the gate structure and extending to cover the SDB structure.
Edits on 31 Mar, 2023
Golden AI
Infobox
Is a
Patent Applicant
0
Current Assignee
0
Patent Jurisdiction
Patent Number
101412280
Date of Patent
November 27, 2018
0Patent Application Number
159178590
Date Filed
March 12, 2018
0Patent Citations Received
Patent Primary Examiner
Edits on 25 Sep, 2022
Golden AI
Infobox
Patent Citations Received
Edits on 22 Sep, 2022
Golden AI
Infobox
Is a
Patent Applicant
0
Current Assignee
0
Patent Jurisdiction
Patent Number
101412280
Date of Patent
November 27, 2018
0Patent Application Number
159178590
Date Filed
March 12, 2018
0Patent Citations Received
Patent Primary Examiner
Edits on 10 Feb, 2022
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Patent citations received
Edits on 23 Jan, 2022
Golden AI
Edits made to:
Infobox (+9 properties)
US Patent 10141228 FinFET device having single diffusion break structure
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
10141228
Date of patent
November 27, 2018
Patent application number
15917859
Date Filed
March 12, 2018
Patent primary examiner
Find more entities like US Patent 10141228 FinFET device having single diffusion break structure
Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
