Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jhon Jhy Liaw0
Date of Patent
November 27, 2018
0Patent Application Number
156133870
Date Filed
June 5, 2017
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device comprises four SRAM cells in four quadrants of a region of the semiconductor device, wherein the four SRAM cells include FinFET transistors comprising gate features engaging fin active lines, and the fin active lines of the four SRAM cells have reflection symmetry with respect to an imaginary line dividing the four quadrants along a first direction.
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