US Patent 10147597 Turbulent flow spiral multi-zone precursor vaporizer

A vaporizer useful for depositing material on a semiconductor substrate in a chamber of a chemical vapor deposition apparatus includes a first inlet configured to receive an atomized precursor, a second inlet configured to receive carrier gas, a flow path in fluid communication with the first and second inlets and configured to effect turbulent flow of an atomized precursor and carrier gas stream supplied to the first and second inlets. A plurality of heating elements includes a first heater element configured to heat a first zone of the flow path and a second heater element configured to heat a second zone of the flow path. An outlet in fluid communication with the flow path is configured to deliver vapor produced from the atomized precursor.