US Patent 11830731 Semiconductor deposition reactor manifolds

The present disclosure pertains to embodiments of a semiconductor deposition reactor manifold and methods of using the semiconductor deposition reactor manifold which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The semiconductor deposition reactor manifold has a bore, a first supply channel, and a second supply channel. Advantageously, the first supply channel and the second supply channel merge with the bore in an offset fashion which leads to reduced cross-contamination within the supply channels.