US Patent 10157790 Semiconductor device and method for manufacturing the same

A semiconductor device includes a substrate, a conductive feature, a conductive cap, a dielectric mask, a gate spacer, and a gate stack. The substrate has a source/drain region. The conductive feature is on the source/drain region. The conductive cap is on the conductive feature. The dielectric mask is on the conductive cap and is spaced apart from the conductive feature by the conductive cap. The gate spacer is on the substrate, in which a top surface of the gate spacer is level with a top surface of the mask. The gate stack abuts the gate spacer.