Patent attributes
In an example, the present invention provides a method for forming a film of material for a solid state battery or other energy storage device. The method includes providing a first precursor species, and providing a second precursor species. The method also includes transferring the first precursor species through a first nozzle and outputting the first precursor species in a first molecular form and transferring the second precursor species through a second nozzle and outputting the second precursor species in a second molecular form. The method includes causing formation of first plurality of particles, ranging from about first diameter to about a second diameter, by intermixing the first precursor species with the second precursor species. The method also includes cooling the first plurality of particles at a rate of greater than 100° C./s to a specified temperature.