Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
January 1, 2019
Patent Application Number
15180314
Date Filed
June 13, 2016
Patent Citations Received
Patent Primary Examiner
Patent abstract
A nanowire field effect transistor (FET) device includes a first source/drain region and a second source/drain region. Each of the first and second source/drain regions are formed on an upper surface of a bulk semiconductor substrate. A gate region is interposed between the first and second source/drain regions, and directly on the upper surface of the bulk semiconductor substrate. A plurality of nanowires are formed only in the gate region. The nanowires are suspended above the semiconductor substrate and define gate channels of the nanowire FET device. A gate structure includes a gate electrode formed in the gate region such that the gate electrode contacts an entire surface of each nanowire.
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