Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 15, 2022
Patent Application Number
16717204
Date Filed
December 17, 2019
Patent Citations
Patent Primary Examiner
Patent abstract
Forming a fin, where the fin includes a nanowire stack on a semiconductor substrate, where the nanowire stack includes a plurality of silicon layers and a plurality of silicon germanium layers stacked one on top of the other in an alternating fashion, removing a portion of the fin to form an opening and expose vertical sidewalls of the plurality of silicon layers and the plurality of silicon germanium layer, and epitaxially growing a source drain region/structure in the opening from the exposed vertical sidewalls of the plurality of silicon layers and the plurality of silicon germanium layers, where the source drain region/structure substantially fills the opening.
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